## Two Dimensional Process Simulation of 4H-SiC SiliconCarbide Power MOSFET
## --------------------------------------------------------------------
## Global mesh settings and mesh in newly generated layers
## --------------------------------------------------------------------
grid set.min.normal.size= 0.001 \
set.normal.growth.ratio.2d= 2.0
## SiliconCarbide interface refinement
refinebox interface.materials= { SiliconCarbide }
## Log output level
pdbSet InfoDefault 1
## Multi-threading
math numThreads= 4
## Using Universal Coordinate System (x down | y right)
math coord.ucs
## Save intermediate TDR files: debugging purpose
fset debug 1在sentaurus里什么意思
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grid set.min.normal.size= 0.001 set.normal.growth.ratio.2d= 2.0这行设置了全局网格参数。set.min.normal.size= 0.001定义了2D模拟中网格单元的最小尺寸为0.001微米,这有助于控制网格的最小大小,从而影响仿真的精度和计算成本。set.normal.
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